AT-32011

AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal for use in battery powered applications in wireless markets. The AT-32033 uses the 3 lead SOT‑23, while the AT32011 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques. The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 20 emitter finger inter­digitated geometry yields an easy to match to and extremely fast transistor with moderate power, low noise resistance, and low operating currents. Optimized performance at 2.7 V makes these devices ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery operated systems as an LNA, gain stage, buffer, oscilla­ tor, or active mixer. Typical amplifier designs at 900 MHz yield 1.2 dB noise figures with 12 dB or more associated gain at a 2.7 V, 2 mA bias, with noise performance being relatively insensitive to input match. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications. Voltage breakdowns are high enough for use at 5 volts. The AT-3 series bipolar transistors are fabricated using an optimized version ...