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AS4LC256K16EO
®
3.3V 256K X 16 CMOS DRAM (EDO) Features
Organization: 262,144 words × 16 bits High speed
- 45/60 ns RAS access time - 10/12/15/20 ns column address access time - 7/10/10 ns CAS access time
Low power consumption
EDO page mode 5V I/O tolerant 512 refresh cycles, 8 ms refresh interval
- RAS-only or CAS-before...
