16 Me g FPM DRAM Meg
Austin Semiconductor, Inc. 4M x 4 CMOS DRAM
WITH FAST PAGE MODE, 5 VOLT
AVAILABLE AS MILITARY SPECI...
16 Me g FPM DRAM Meg
Austin Semiconductor, Inc. 4M x 4
CMOS DRAM
WITH FAST PAGE MODE, 5 VOLT
AVAILABLE AS MILITARY SPECIFICATIONS
MIL-STD-883
Vcc DQ0 DQ1 W\ RAS\ NC
AS4C4M4
PIN ASSIGNMENT (Top View)
24 Pin TSOP (DG)
1 2 3 4 5 6 24 23 22 21 20 19 Vss DQ3 DQ2 CAS\ OE\ A9
FEATURES
Fast Page Mode Operation CAS\-before-RAS\ Refresh Capability RAS\-only and Hidden Refresh Capability Self-refresh Capability Fast Parallel Test Mode Capability TTL Compatible Inputs and Outputs Early Write or Output Enable Controlled Write JEDEC Standard Pinout Single +5V (±10%) Power Supply
OPTIONS
Timing 60ns access 70ns access Package Plastic TSOP, 24-pin
MARKINGS
-6 -7
PIN ASSIGNMENT
DG
Operating Temperature Ranges Military (-55oC to +125oC) Industrial (-40oC to +85oC)
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode
CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10%) power supply, refresh cycle (2K), and fast access times (60 and 70ns). Other features include CAS\-before-RAS\, RAS\-only refresh, and Hidden refresh capabilities. This 4M x 4 Fast Page Mode DRAM is fabricated using an advanced
CMOS process to realize high bandwidth, low power consumption and high reliability. It may be used as main memory for high level computers, microcomputers and personal computers.
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