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APTGF90DH60TG

Microsemi Corporation

Asymmetrical - Bridge NPT IGBT Power Module

APTGF90DH60TG Asymmetrical - Bridge NPT IGBT Power Module VBUS VBUS SENSE Q1 G1 CR3 www.DataSheet4U.com VCES = 600V IC...


Microsemi Corporation

APTGF90DH60TG

File Download Download APTGF90DH60TG Datasheet


Description
APTGF90DH60TG Asymmetrical - Bridge NPT IGBT Power Module VBUS VBUS SENSE Q1 G1 CR3 www.DataSheet4U.com VCES = 600V IC = 90A @ Tc = 80°C Application Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features Non Punch Through (NPT) Fast IGBT® E1 OUT1 O UT2 Q4 G4 CR2 E4 0/VBUS SENSE NTC1 0/VBUS NT C2 VBUS SENSE G4 E4 OUT2 VBUS 0/VBUS OUT1 E1 G1 0/VBUS SENSE NTC2 NTC1 Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Easy paralleling due to positive TC of VCEsat Low profile RoHS compliant Max ratings 600 110 90 315 ±20 416 200A @ 600V Unit V July, 2006 1-6 APTGF90DH60TG – Rev 2 - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C A V W Pulsed Collector Current Gate – Emitter Voltage Maxim...




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