Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT8075BVFR
800V 12A 0.750Ω
POWER MOS V ®
FREDFET
TO-247
Power MOS V® is a new generation of high voltage N-Channel e...
APT8075BVFR
800V 12A 0.750Ω
POWER MOS V ®
FREDFET
TO-247
Power MOS V® is a new generation of high
voltage N-Channel enhancement mode power
MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
Fast Recovery Body Diode Lower Leakage Faster Switching
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source
Voltage
100% Avalanche Tested
FREDFET
D G S
Popular TO-247 Package
All Ratings: TC = 25°C unless otherwise specified.
APT8075BVFR UNIT Volts Amps
800 12 48 ±30 ±40 260 2.08 -55 to 150 300 12 30
4 1
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
Gate-Source
Voltage Continuous Gate-Source
Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
960
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown
Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
800 12 0.75 250 1000 ±100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms µA nA ...