APT8075BN

D TO-247 G S APT8075BN 800V ® 13.0A 0.75Ω 12.0A 0.90Ω POWER MOS IV MAXIMUM RATINGS Symbol V DSS ID IDM V GS PD TJ,TSTG TL Parameter Drain-Source Voltage APT8090BN 800V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise specified. APT 8075BN APT 8090BN UNIT Volts Amps 800 13 56 ±30 310 2.48 800 12 48 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 Volts Watts W/°C °C -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current 2 MIN APT8075BN APT8090BN APT8075BN APT8090BN APT8075BN APT8090BN TYP MAX UNIT Volts 800 800 13 Amps ID(ON) (VDS > ID(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 2 12 0.75 Ohms RDS(ON) 0.90 250 1000 ±100 2 4 µA nA Volts IDSS IGSS V GS(TH) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ± 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, I D = 1.0mA) THERMAL CHARACTERISTICS Symbol RθJC R θJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 050-8007 Rev C 0.40 40 CAUTION: These Devices are Sensi...