D
S G D
S
G S
SO
2 T-
27
APT8030JN APT8035JN
800V 800V
27.0A 0.30Ω 25.0A 0.35Ω
ISOTOP®
"UL Recognized" File N...
D
S G D
S
G S
SO
2 T-
27
APT8030JN APT8035JN
800V 800V
27.0A 0.30Ω 25.0A 0.35Ω
ISOTOP®
"UL Recognized" File No. E145592 (S)
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source
Voltage
®
SINGLE DIE ISOTOP® PACKAGE
All Ratings: TC = 25°C unless otherwise specified.
APT 8030JN APT 8035JN UNIT Volts Amps
N - CHANNEL ENHANCEMENT MODE HIGH
VOLTAGE POWER
MOSFETS
800 27 108 ± 30 520 4.16
800 25 100
Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source
Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
1
and Inductive Current Clamped
Volts Watts W/°C °C
-55 to 150 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown
Voltage (VGS = 0V, I D = 250 µA) On State Drain Current
2
MIN APT8030JN APT8035JN APT8030JN APT8035JN APT8030JN APT8035JN
TYP
MAX
UNIT Volts
800 800 27
Amps
ID(ON)
(VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate
Voltage Drain Current (VDS = VDSS, VGS = 0V)
2
25 0.30
Ohms
RDS(ON)
0.35 250 1000 ± 100 2 4
µA nA Volts
IDSS IGSS VGS(TH)
Zero Gate
Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ± 30V, VDS = 0V) Gate Threshold
Voltage (VDS = VGS, I D = 2.5mA)
THERMAL CHARACTERISTICS
Symbol RΘJC RΘCS C...