APT8030LVFR
800V 27A 0.300Ω
POWER MOS V ®
FREDFET
TO-264
Power MOS V® is a new generation of high voltage N-Channel e...
APT8030LVFR
800V 27A 0.300Ω
POWER MOS V ®
FREDFET
TO-264
Power MOS V® is a new generation of high
voltage N-Channel enhancement mode power
MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
Fast Recovery Body Diode Lower Leakage Faster Switching
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source
Voltage
100% Avalanche Tested
FREDFET
D G S
Popular TO-264 Package
All Ratings: TC = 25°C unless otherwise specified.
APT8030LVFR UNIT Volts Amps
800 27 108 ±30 ±40 520 4.16 -55 to 150 300 27 50
4 1
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
Gate-Source
Voltage Continuous Gate-Source
Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown
Voltage (VGS = 0V, I D = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
800 27 0.300 250 1000 ±100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms µA...