www.DataSheet4U.com
600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG*
*G Denotes RoHS Compliant, Pb F...
www.DataSheet4U.com
600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C O OLMOS
Power Semiconductors
Super Junction
MOSFET
(B)
TO -2 47
D3PAK
Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt Rated Popular TO-247 or Surface Mount D3 Package
(S)
D G S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL dv/ dt IAR EAR EAS Parameter Drain-Source
Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT60N60B_SCS(G) 600 60 38 230 ±30 431 3.45 -55 to 150 260 50 11
2 3
UNIT Volts
Amps
Gate-Source
Voltage Continuous Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
MOSFET dv/dt Ruggedness (VDS = 480V) Avalanche Current
2
Volts Watts W/°C °C V/ns Amps mJ
Repetitive Avalanche Energy
3 1950
Single Pulse Avalanche Energy
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)DSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown
Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance
4
MIN 600
TYP
MAX
UNIT Volts
(VGS = 10V, ID = 44A)
0.045 25 250 ±100 2.1 3 3.9
Ohms µA nA Volts
3-2006 050-7239 Rev B
Zero Gate
Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate
Voltage Drain Current (VDS = 60...