APT60N60BCS

www.DataSheet4U.com 600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C O OLMOS Power Semiconductors Super Junction MOSFET (B) TO -2 47 D3PAK Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt Rated Popular TO-247 or Surface Mount D3 Package (S) D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL dv/ dt IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT60N60B_SCS(G) 600 60 38 230 ±30 431 3.45 -55 to 150 260 50 11 2 3 UNIT Volts Amps Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. MOSFET dv/dt Ruggedness (VDS = 480V) Avalanche Current 2 Volts Watts W/°C °C V/ns Amps mJ Repetitive Avalanche Energy 3 1950 Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)DSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 4 MIN 600 TYP MAX UNIT Volts (VGS = 10V, ID = 44A) 0.045 25 250 ±100 2.1 3 3.9 Ohms µA nA Volts 3-2006 050-7239 Rev B Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 60...