Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
APT6017JFLL
600V 31A 0.170W
POWER MOS 7TM
FREDFET
S G D S
Power MOS 7TM is a new generation of low loss, high voltage...
APT6017JFLL
600V 31A 0.170W
POWER MOS 7TM
FREDFET
S G D S
Power MOS 7TM is a new generation of low loss, high
voltage, N-Channel enhancement mode power
MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source
Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
SO
ISOTOP ®
2 T-
27
"UL Recognized"
Increased Power Dissipation Easier To Drive Popular SOT-227 Package FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT6017JFLL UNIT Volts Amps
600 31 124 ±30 ±40 375 3.0 -55 to 150 300 31 35
4
Gate-Source
Voltage Continuous Gate-Source
Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1600
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown
Voltage (VGS = 0V, I D = 250µA) On State Dr...