APT6017B2FLL

APT6017B2FLL APT6017LFLL 600V 35A 0.170Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS 7® by significantly lowering 7® combines lower conduction and switching RDS(ON) losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg Increased Power Dissipation Easier To Drive Popular T-MAX™ or TO-264 Package FAST RECOVERY BODY DIODE T-MAX™ TO-264 LFLL D G S MAXIMUM RATINGS Symbol Parameter VDSS ID IDM VGS VGSM PD Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 All Ratings: TC = 25°C unless otherwise specified. APT6017B2FLL_LFLL UNIT 600 Volts 35 Amps 140 ±30 Volts ±40 500 Watts 4.0 W/°C -55 to 150 300 35 °C Amps 35 mJ 1600 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 600 RDS(o...