APT56M60B2 APT56M60L
600V, 60A, 0.11Ω Max
N-Channel MOSFET
Power MOS 8™ is a high speed, high voltage N-channel switch...
APT56M60B2 APT56M60L
600V, 60A, 0.11Ω Max
N-Channel
MOSFET
Power MOS 8™ is a high speed, high
voltage N-channel switch-mode power
MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
T-Ma x TM
TO-264
APT56M60B2
APT56M60L D
Single die
MOSFET G S
FEATURES
Fast switching with low EMI/RFI Low RDS(on) Ultra low Crss for improved noise immunity Low gate charge Avalanche energy rated RoHS compliant
TYPICAL APPLICATIONS
PFC and other boost converter Buck converter Two switch forward (asymmetrical bridge) Single switch forward Flyback Inverters
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C
IDM
Pulsed Drain Current 1
VGS Gate-Source
Voltage
EAS Single Pulse Avalanche Energy 2
IAR
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD RθJC
Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance
RθCS Case to Sink Thermal Resistance, Flat, ...