Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
APT50M80JLC
500V 52A 0.080 W
S G D S
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage...
APT50M80JLC
500V 52A 0.080 W
S G D S
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high
voltage N-Channel enhancement mode power
MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. Lower Gate Charge Faster Switching 100% Avalanche Tested
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter
SO
ISOTOP ®
2 T-
27
"UL Recognized"
Lower Input Capacitance Easier To Drive Popular SOT-227 Package
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT50M80JLC UNIT Volts Amps
Drain-Source
Voltage
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
Gate-Source
Voltage Continuous Gate-Source
Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L A C I N H C N E T O I D T E A C M N R A O V F D A IN
500 52 208 ±30 ±40 500 4.0 -55 to 150 300 52 50
(Repetitive and Non-Repetitive)
1 4
Volts Watts W/°C °C Amps mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown
Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
5...