APT50M75LFLL

APT50M75B2FLL APT50M75LFLL 500V 57A 0.075Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering R and Qg. Power MOS 7® combines lower conduction and switching DS(ON) losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. T-MAX™ TO-264 LFLL Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg Increased Power Dissipation Easier To Drive Popular T-MAX™ or TO-264 Package FAST RECOVERY BODY DIODE D G S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT50M75B2FLL_LFLL UNIT VDSS ID IDM VGS VGSM Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient 500 Volts 57 Amps 228 ±30 Volts ±40 PD Total Power Dissipation @ TC = 25°C Linear Derating Factor 570 4.56 Watts W/°C TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 -55 to 150 300 57 50 2500 °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = ...