APT50M75JLLU2

APT50M75JLLU2 APT50M75JLLU2 500V 51A 0.075W S G D K POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage SO ISOTOP® 2 T- 27 "UL Recognized" D G S Increased Power Dissipation Easier To Drive PFC "Boost" Configuration K All Ratings: TC = 25°C unless otherwise specified. APT50M75JLLU2 UNIT Volts Amps Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy L A C I N H C N E T O I E T A C N RM A V FO D A IN (Repetitive and Non-Repetitive) 1 4 500 51 204 ±30 ±40 465 Volts Watts W/°C °C Amps mJ 3.72 300 51 50 -55 to 150 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown...