Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
APT50M75JLLU2
APT50M75JLLU2
500V 51A 0.075W
S G D K
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high ...
APT50M75JLLU2
APT50M75JLLU2
500V 51A 0.075W
S G D K
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high
voltage, N-Channel enhancement mode power
MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source
Voltage
SO
ISOTOP®
2 T-
27
"UL Recognized"
D G S
Increased Power Dissipation Easier To Drive PFC "Boost" Configuration
K
All Ratings: TC = 25°C unless otherwise specified.
APT50M75JLLU2 UNIT Volts Amps
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
Gate-Source
Voltage Continuous Gate-Source
Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L A C I N H C N E T O I E T A C N RM A V FO D A IN
(Repetitive and Non-Repetitive)
1 4
500 51 204
±30 ±40 465
Volts Watts W/°C °C Amps mJ
3.72 300 51 50
-55 to 150
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown...