APT50M65B2LL APT50M65LLL
500V 67A 0.065Ω
POWER MOS 7 R MOSFET
B2LL
Power MOS 7® is a new generation of low loss, high...
APT50M65B2LL APT50M65LLL
500V 67A 0.065Ω
POWER MOS 7 R
MOSFET
B2LL
Power MOS 7® is a new generation of low loss, high
voltage, N-Channel
enhancement mode power
MOSFETS. Both conduction and switching
losses and Q
are addressed . Power MOS
with Power MOS 7® by significantly lowering 7® combines lower conduction and switching
RDS(ON) losses
g
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg
Increased Power Dissipation Easier To Drive Popular T-MAX™ or TO-264 Package
T-MaxTM
TO-264
LLL D
G S
MAXIMUM RATINGS Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified. APT50M65B2LL_LLL UNIT
VDSS ID IDM
VGS VGSM
PD
TJ,TSTG TL IAR EAR EAS
Drain-Source
Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source
Voltage Continuous Gate-Source
Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
500 67 268 ±30 ±40 694 5.5 -55 to 150 300 67 50 3000
Volts Amps
Volts Watts W/°C
°C Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS Drain-Source Breakdown
Voltage (VGS = 0V, ID = 250µA)
500
RDS(on) Drain-Source On-State Resistance ...