www.DataSheet4U.com
APT50GP60B APT50GP60S
600V
POWER MOS 7 IGBT
TO-247
®
The POWER MOS 7® IGBT is a new generation o...
www.DataSheet4U.com
APT50GP60B APT50GP60S
600V
POWER MOS 7 IGBT
TO-247
®
The POWER MOS 7® IGBT is a new generation of high
voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high
voltage switching applications and has been optimized for high frequency switchmode power supplies.
D3PAK
G
C
C
E
G
E
Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff
200 kHz operation @ 400V, 26A 100 kHz operation @ 400V, 41A SSOA rated
G E C
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter
Voltage Gate-Emitter
Voltage Gate-Emitter
Voltage Transient Continuous Collector Current
7
All Ratings: TC = 25°C unless otherwise specified.
APT50GP60B_S UNIT
600 ±20 ±30
@ TC = 25°C Volts
100 72 190 190A@600V 625 -55 to 150 300
Watts °C Amps
Continuous Collector Current @ TC = 110°C Pulsed Collector Current
1
@ TC = 150°C
Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown
Voltage (VGE = 0V, I C = 500µA) Gate Threshold
Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT
600 3 4.5 2.2 2.1 500
2
6 2.7
Volts
Collector-Emitter On
Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On
Voltage (VGE = 15V, I C = 50A, Tj = 1...