The Fast IGBT is a new generation of high voltage power IGBTs.
APT50GF60HR
600V 55A
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through T...
APT50GF60HR
600V 55A
Fast IGBT
The Fast IGBT is a new generation of high
voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On
voltage.
TO-258
Low Forward
Voltage Drop Low Tail Current Avalanche Rated Hermetic Package
MAXIMUM RATINGS
Symbol VCES V CGR VGE I C1 I C2 I CM I LM EAS PD TJ,TSTG TL Parameter Collector-Emitter
Voltage
High Freq. Switching to 20KHz Ultra Low Leakage Current RBSOA and SCSOA Rated
C E G
C G E
All Ratings: TC = 25°C unless otherwise specified.
APT50GF60HR UNIT
Collector-Gate
Voltage (RGE = 20KW) Gate-Emitter
Voltage
Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 90°C Pulsed Collector Current
1
RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C Single Pulse Avalanche Energy Total Power Dissipation
2
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Y R A N I M I L E R P
600 600 ±20 55 50
@ TC = 25°C
Volts
110 100 75
Amps
mJ Watts °C
180
-55 to 150 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown
Voltage (VGE = 0V, I C = 0.5mA) Gate Threshold
Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) MIN TYP MAX UNIT
600 4.5 5.5 2.1 2.2 6.5 2.7 2.8 0.5 5.0
6-2000 050-5976 Rev -
Volts
Collector-Emitter On
Voltage (VGE = 15V, I C = I C2, Tj = 25°C) Collector-Emitter On Vo...