APT50GF60BR

APT50GF60BR APT50GF60BR 600V 75A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. TO-247 C Low Forward Voltage Drop Low Tail Current Avalanche Rated MAXIMUM RATINGS Symbol VCES VCGR VGE I C1 I C2 I CM I LM EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage High Freq. Switching to 20KHz Ultra Low Leakage Current RBSOA and SCSOA Rated G C E G E All Ratings: TC = 25°C unless otherwise specified. APT50GF60BR UNIT 600 600 ±20 75 50 160 100 75 300 -55 to 150 300 °C mJ Watts Amps Volts Collector-Gate Voltage (RGE = 20KW) Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 90°C Pulsed Collector Current 1 @ TC = 25°C RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C Single Pulse Avalanche Energy Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 2 STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) MIN TYP MAX UNIT 600 4.5 5.5 2.1 2.2 6.5 2.7 2.8 0.5 5.0 6-2000 052-6207 Rev E Volts Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 1...