APT5020BVFR

APT5020BVFR 500V 26A 0.200Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode Lower Leakage Faster Switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage 100% Avalanche Tested FREDFET D G Popular TO-247 Package S All Ratings: TC = 25°C unless otherwise specified. APT5020BVFR UNIT Volts Amps 500 26 104 ±30 ±40 300 2.4 -55 to 150 300 26 30 4 1 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 500 26 0.20 250 1000 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms µA nA...