APT5016BFLL

APT5016BFLL APT5016SFLL 500V 30A 0.160Ω POWER MOS 7 R FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering aanlodnQg g.wiPthoweexrcMepOtiSon7a®llcyomfabsitnesswliotcwheinr gcosnpdeuectdiosn and switching inherent with lRoDsSs(eONs) APT's patented metal gate structure. TO-247 D3PAK Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg Increased Power Dissipation Easier To Drive TO-247 or Surface Mount D3PAK Package FAST RECOVERY BODY DIODE D G S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT5016BFLL_SFLL UNIT VDSS ID IDM VGS VGSM Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient 500 Volts 30 Amps 120 ±30 Volts ±40 PD Total Power Dissipation @ TC = 25°C Linear Derating Factor 329 2.63 Watts W/°C TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 -55 to 150 300 30 30 1300 °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-...