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TYPICAL PERFORMANCE CURVES
APT40GP90B
APT40GP90B
900V
POWER MOS 7 IGBT
®
TO-247
The POWER MOS...
www.DataSheet4U.com
TYPICAL PERFORMANCE CURVES
APT40GP90B
APT40GP90B
900V
POWER MOS 7 IGBT
®
TO-247
The POWER MOS 7 IGBT is a new generation of high
voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high
voltage switching applications and has been optimized for high frequency switchmode power supplies.
®
G
C
Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter
Voltage Gate-Emitter
Voltage Gate-Emitter
Voltage Transient Continuous Collector Current
7
SSOA Rated
E
C G E
All Ratings: TC = 25°C unless otherwise specified.
APT40GP90B UNIT
900 ±20 ±30
@ TC = 25°C Volts
100 50 160 160A @ 900V 543 -55 to 150 300
Watts °C Amps
Continuous Collector Current @ TC = 110°C Pulsed Collector Current
1
@ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown
Voltage (VGE = 0V, I C = 250µA) Gate Threshold
Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT
900 3 4.5 3.2 2.7 250
µA nA
5-2004 050-7479 Rev A
6 3.9
Collector-Emitter On
Voltage (VGE = 15V, I C = 40A, Tj = 25°C) Collector-Emitter On
Voltage (VGE = 15V, I C = 40A, Tj = 125°C) Collector Cut-o...