The Fast IGBT is a new generation of high voltage power IGBTs.
APT33GF120B2RD APT33GF120LRD
1200V
APT33GF120B2RD
52A
TO-264 (LRD)
Fast IGBT & FRED
The Fast IGBT™ is a new generation...
APT33GF120B2RD APT33GF120LRD
1200V
APT33GF120B2RD
52A
TO-264 (LRD)
Fast IGBT & FRED
The Fast IGBT™ is a new generation of high
voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.
G
T-Max™ (B2RD)
Low Forward
Voltage Drop High Freq. Switching to 20KHz Low Tail Current Ultra Low Leakage Current RBSOA and SCSOA Rated Ultrafast Soft Recovery Antiparallel Diode
MAXIMUM RATINGS (IGBT)
Symbol VCES VCGR VGE I C1 I C2 I CM1 I CM2 PD TJ,TSTG TL Parameter Collector-Emitter
Voltage
C
G
E
C
C
E
APT33GF120LRD
G E
APT33GF120B2RD/LRD UNIT
All Ratings: TC = 25°C unless otherwise specified.
1200
RY A IN
MIN
Collector-Gate
Voltage (RGE = 20KΩ) Gate-Emitter
Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 90°C Pulsed Collector Current Pulsed Collector Current Total Power Dissipation
1 1
1200 ±20 52 33 104 66 300 -55 to 150 300
Watts °C Amps Volts
@ TC = 25°C @ TC = 90°C
Operating and Storage Junction Temperature Range
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown
Voltage (VGE = 0V, I C = 0.5mA) Gate Threshold
Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) Collector-Emitter On
Voltage (VGE = 15V, I C = 25A, Tj = 25°C) Collector-Emitter On
Voltage (VGE = 15V, I C = 25A, Tj = 125°C) Collector Cut-off Current ...