APT30M61BLL APT30M61SLL
300V 54A 0.061Ω
POWER MOS 7 R MOSFET
Power MOS 7® is a new generation of low loss, high voltag...
APT30M61BLL APT30M61SLL
300V 54A 0.061Ω
POWER MOS 7 R
MOSFET
Power MOS 7® is a new generation of low loss, high
voltage, N-Channel
enhancement mode power
MOSFETS. Both conduction and switching
losses are addressed and Qg. Power MOS
with Power MOS 7® by significantly lowering 7® combines lower conduction and switching
RDS(ON) losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
Lower Input Capacitance Increased Power Dissipation
TO-247
D3PAK D
Lower Miller Capacitance Lower Gate Charge, Qg
MAXIMUM RATINGS
Easier To Drive TO-247 or Surface Mount D3PAK Package
G S
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT30M61BLL-SLL UNIT
VDSS ID IDM
VGS VGSM
Drain-Source
Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source
Voltage Continuous Gate-Source
Voltage Transient
300
Volts
54 Amps
216
±30 Volts
±40
PD
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
403
Watts
3.23
W/°C
TJ,TSTG TL IAR EAR EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
-55 to 150 300 54 30 1300
°C Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS RDS(on)
Drain-Source Breakdown
Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 ...