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APT30M40JVFR Datasheet

Part Number APT30M40JVFR
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description Power MOSFET
Datasheet APT30M40JVFR DatasheetAPT30M40JVFR Datasheet (PDF)

APT30M40JVFR 300V 70A 0.040Ω S G D S POWER MOS V ® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SO ISOTOP ® 2 T- 27 "UL Recognized" • Fast Recovery Body Diode • Lower Leakage • Faster Switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL .

  APT30M40JVFR   APT30M40JVFR






Power MOSFET

APT30M40JVFR 300V 70A 0.040Ω S G D S POWER MOS V ® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SO ISOTOP ® 2 T- 27 "UL Recognized" • Fast Recovery Body Diode • Lower Leakage • Faster Switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage • 100% Avalanche Tested • Popular SOT-227 Package G FREDFET D All Ratings: TC = 25°C unless otherwise specified. APT30M40JVR UNIT Volts Amps S 300 70 280 ±30 ±40 450 3.6 -55 to 150 300 70 50 4 1 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 300 70 0.040 250 1000 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resis.


2005-04-23 : DP100S    T510    74HCT166    74HCT173    74HCT174    74HCT175    74HCT181    74HCT182    74HCT190    74HCT191   


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