APT30M30B2LL APT30M30LLL
300V 100A 0.030W
B2LL
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltag...
APT30M30B2LL APT30M30LLL
300V 100A 0.030W
B2LL
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high
voltage, N-Channel enhancement mode power
MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source
Voltage
T-MAX™
TO-264
LLL
Increased Power Dissipation Easier To Drive Popular T-MAX™ or TO-264 Package
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT30M30 UNIT Volts Amps
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1 5
Gate-Source
Voltage Continuous Gate-Source
Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L A C I N H C N E T IO E T C MA N A OR V AD INF
5
300 100 400
±30 ±40 690
Volts Watts W/°C °C Amps mJ
5.52 300 100 50
-55 to 150
(Repetitive and Non-Repetitive)
1
4
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown
Voltage (VGS = 0V, ...