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TYPICAL PERFORMANCE CURVES ®
1200V APT25GN120B_S(G) APT25GN120B APT25GN120S APT25GN120BG* APT25GN1...
www.DataSheet4U.com
TYPICAL PERFORMANCE CURVES ®
1200V APT25GN120B_S(G) APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.
(B)
TO -2 47
D3PAK
C G E
(S)
G
C
E
1200V Field Stop Trench Gate: Low VCE(on) Easy Paralleling Integrated Gate Resistor: Low EMI, High Reliability
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter
Voltage Gate-Emitter
Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT25GN120B(G) UNIT Volts
1200 ±30 67 33 75 75A @ 1200V 272 -55 to 150 300
Amps
Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts °C
STATIC ELECTRICAL CHARACTERI...