APT20M26WVR
200V 65A 0.026Ω
POWER MOS V ®
TO-267
Power MOS is a new generation of high voltage N-Channel enhancement m...
APT20M26WVR
200V 65A 0.026Ω
POWER MOS V ®
TO-267
Power MOS is a new generation of high
voltage N-Channel enhancement mode power
MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
V®
Faster Switching Lower Leakage
100% Avalanche Tested New TO-267 Package
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source
Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1 5 5
All Ratings: TC = 25°C unless otherwise specified.
APT20M26WVR UNIT Volts Amps
200 65 260 ±30 ±40 450 3.6 -55 to 150 300 65 50
4
Gate-Source
Voltage Continuous Gate-Source
Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1 5
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown
Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2 5
MIN
TYP
MAX
UNIT Volts Amps
200 65 0.026 25 250 ±100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms µA nA Volts
050-5829 Rev B
Zero Gate
Voltage...