APT20M16B2FLL APT20M16LFLL
200V 100A 0.016W
POWER MOS 7TM
FREDFET
B2FLL
Power MOS 7TM is a new generation of low los...
APT20M16B2FLL APT20M16LFLL
200V 100A 0.016W
POWER MOS 7TM
FREDFET
B2FLL
Power MOS 7TM is a new generation of low loss, high
voltage, N-Channel enhancement mode power
MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive Lower Gate Charge, Qg Popular T-MAX™ or TO-264 Package FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source
Voltage
T-MAX™
TO-264
LFLL
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT20M16 UNIT Volts Amps
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1 5
Gate-Source
Voltage Continuous Gate-Source
Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L A C I N H C N E T IO E T C MA N A OR V AD INF
100 400 ±30 ±40 690 5.52 300 100 50
(Repetitive and Non-Repetitive)
1 4
200
Volts Watts W/°C °C Amps mJ
-55 to 150
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-S...