The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
APT15GT60BRD
600V 30A
Thunderbolt IGBT™ & FRED
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. U...
APT15GT60BRD
600V 30A
Thunderbolt IGBT™ & FRED
The Thunderbolt IGBT™ is a new generation of high
voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and ultrafast switching speed.
TO-247
Low Forward
Voltage Drop High Freq. Switching to 150KHz Low Tail Current Ultra Low Leakage Current Avalanche Rated RBSOA and SCSOA Rated Ultrafast Soft Recovery Antiparallel Diode
MAXIMUM RATINGS (IGBT)
Symbol VCES VCGR VGE I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter
Voltage
G
C
E
C
G E
APT15GT60BRD UNIT
All Ratings: TC = 25°C unless otherwise specified.
600
RY A IN
MIN
Collector-Gate
Voltage (RGE = 20KΩ) Gate-Emitter
Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current Pulsed Collector Current
1 1
600 ±20 30 15 60 30 24 125 -55 to 150 300
Volts
@ TC = 25°C @ TC = 110°C
2
Amps
Single Pulse Avalanche Energy Total Power Dissipation
mJ Watts °C
Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown
Voltage (VGE = 0V, I C = 0.5mA, Tj = -55°C) Gate Threshold
Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) Collector-Emitter On
Voltage (VGE = 15V, I C = I C2, Tj = 25°C) Collec...