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APT15GT60BRD

Advanced Power Technology

The Thunderbolt IGBT is a new generation of high voltage power IGBTs.

APT15GT60BRD 600V 30A Thunderbolt IGBT™ & FRED The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. U...


Advanced Power Technology

APT15GT60BRD

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Description
APT15GT60BRD 600V 30A Thunderbolt IGBT™ & FRED The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and ultrafast switching speed. TO-247 Low Forward Voltage Drop High Freq. Switching to 150KHz Low Tail Current Ultra Low Leakage Current Avalanche Rated RBSOA and SCSOA Rated Ultrafast Soft Recovery Antiparallel Diode MAXIMUM RATINGS (IGBT) Symbol VCES VCGR VGE I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage G C E C G E APT15GT60BRD UNIT All Ratings: TC = 25°C unless otherwise specified. 600 RY A IN MIN Collector-Gate Voltage (RGE = 20KΩ) Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current Pulsed Collector Current 1 1 600 ±20 30 15 60 30 24 125 -55 to 150 300 Volts @ TC = 25°C @ TC = 110°C 2 Amps Single Pulse Avalanche Energy Total Power Dissipation mJ Watts °C Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS (IGBT) Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA, Tj = -55°C) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C) Collec...




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