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APT12067B2LL Datasheet

Part Number APT12067B2LL
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description N-Channel enhancement mode power MOSFET
Datasheet APT12067B2LL DatasheetAPT12067B2LL Datasheet (PDF)

APT12067B2LL APT12067LLL 1200V 18A 0.670W POWER MOS 7TM B2LL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Increased Power Dissipation T-MAX.

  APT12067B2LL   APT12067B2LL






N-Channel enhancement mode power MOSFET

APT12067B2LL APT12067LLL 1200V 18A 0.670W POWER MOS 7TM B2LL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Increased Power Dissipation T-MAX™ TO-264 LLL D • Lower Miller Capacitance • Easier To Drive G • Lower Gate Charge, Qg • Popular T-MAX™ or TO-264 Package S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter APT12067 Drain-Source Voltage 1200 Continuous Drain Current @ TC = 25°C LPulsed Drain Current 1 ICAGate-Source Voltage Continuous NGate-Source Voltage Transient HTotal Power Dissipation @ TC = 25°C EC NLinear Dera.


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