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APT1201R6BVR

Part Number	APT1201R6BVR
Manufacturer	Advanced Power Technology
Description	Power MOSFET
Published	Apr 23, 2005
Detailed Description	APT1201R6BVR 1200V 8A 1.600Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode ...
Datasheet	APT1201R6BVR PDF File

Overview

APT1201R6BVR 1200V 8A 1.
600Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
TO-247 • Faster Switching • Lower Leakage • 100% Avalanche Tested • Popular TO-247 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified.
APT1201R6BVR UNIT Volts Amps 1200 8 32 ±30 ±40 280 2.
24 -55 to ...

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