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APT10M19BVR

Advanced Power Technology
Part Number APT10M19BVR
Manufacturer Advanced Power Technology
Description MOSFET
Published Apr 23, 2005
Detailed Description APT10M19BVR 100V 75A 0.019Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode p...
Datasheet PDF File APT10M19BVR PDF File

APT10M19BVR
APT10M19BVR

Overview
APT10M19BVR 100V 75A 0.
019Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
TO-247 • Faster Switching • Lower Leakage • 100% Avalanche Tested • Popular TO-247 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 5 5 All Ratings: TC = 25°C unless otherwise specified.
APT10M19BVR UNIT Volts Amps 100 75 300 ±30 ±40 370 2.
96 -55 ...


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