APT10M09B2VR APT10M09LVR
100V 100A 0.009W
B2VR
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel...
APT10M09B2VR APT10M09LVR
100V 100A 0.009W
B2VR
POWER MOS V ®
Power MOS V® is a new generation of high
voltage N-Channel enhancement mode power
MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
T-MAX™
TO-264
LVR
Identical Specifications: T-MAX™ or TO-264 Package Faster Switching Lower Leakage
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter
D G S
100% Avalanche Tested
All Ratings: TC = 25°C unless otherwise specified.
APT10M09 UNIT Volts Amps
Drain-Source
Voltage
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1 5
Gate-Source
Voltage Continuous Gate-Source
Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1 5
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L A C I N H C N E T O I D T E A C M N R A O V F D A IN
100 100 400
5
±30 ±40 625 5.0
Volts Watts W/°C °C Amps mJ
-55 to 150 300 100 50
(Repetitive and Non-Repetitive)
1
4
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown
Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2 5
MIN
TYP
MAX
UNIT Volts Amps
100 100 0.009 250 1000 2 4 ±100
(VDS > I D(on) x R DS(on) Max, V...