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APT100GF60LR Datasheet

Part Number APT100GF60LR
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description The Fast IGBT is a new generation of high voltage power IGBTs.
Datasheet APT100GF60LR DatasheetAPT100GF60LR Datasheet (PDF)

APT100GF60B2R APT100GF60LR 600V APT100GF60B2R 100A TO-264 (LR) Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. T-Max™ (B2R) • Low Forward Voltage Drop • Low Tail Current • Avalanche Rated MAXIMUM RATINGS Symbol VCES VCGR VEC VGE I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage • High Freq. Switching to 20K.

  APT100GF60LR   APT100GF60LR






The Fast IGBT is a new generation of high voltage power IGBTs.

APT100GF60B2R APT100GF60LR 600V APT100GF60B2R 100A TO-264 (LR) Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. T-Max™ (B2R) • Low Forward Voltage Drop • Low Tail Current • Avalanche Rated MAXIMUM RATINGS Symbol VCES VCGR VEC VGE I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage • High Freq. Switching to 20KHz • Ultra Low Leakage Current • RBSOA and SCSOA Rated G C E G C C E APT100GF60LR G E All Ratings: TC = 25°C unless otherwise specified. APT100GF60B2R/LR UNIT 600 RY A IN MIN Collector-Gate Voltage (RGE = 20KΩ) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current 5 600 15 ±20 100 100 280 200 85 390 -55 to 150 300 Volts @ TC = 25°C Continuous Collector Current @ TC = 90°C Pulsed Collector Current Pulsed Collector Current 1 1 @ TC = 25°C @ TC = 90°C 2 Amps IM Single Pulse Avalanche Energy Total Power Dissipation mJ Watts °C Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES RBVCES VGE(TH) VCE(ON) Characteristic / Test Conditions PR EL TYP MAX UNIT Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) Col.


2005-04-23 : DP100S    T510    74HCT166    74HCT173    74HCT174    74HCT175    74HCT181    74HCT182    74HCT190    74HCT191   


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