APT100GF60JR

APT100GF60JR 600V 100A E C Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. E G SO ISOTOP ® 2 T- 27 Low Forward Voltage Drop Low Tail Current Avalanche Rated High Freq. Switching to 20KHz Ultra Low Leakage Current RBSOA and SCSOA Rated "UL Recognized" C G E MAXIMUM RATINGS Symbol VCES VCGR VGE I C1 I C2 I CM I LM EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage All Ratings: TC = 25°C unless otherwise specified. APT100GF60JR UNIT Collector-Gate Voltage (RGE = 20KW) Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current @ TC = 60°C Pulsed Collector Current 1 RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C Single Pulse Avalanche Energy Total Power Dissipation 2 Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. L A C I N H C N E T O I E T C MA N A OR V AD INF 600 ±20 100 100 280 200 85 4 600 Volts @ TC = 25°C Amps @ TC = 25°C mJ Watts °C 500 -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) MIN TYP MAX UNIT 600 4.5 5.5 2.2 2.8 6.5 2.7 3.4 1.0 5.0 ±100 nA 052-6261 Rev - 5-2001 Collector-Emitter On Voltage (VGE...