APT10050B2LC APT10050LLC
1000V 21A 0.500W
B2LC
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, hi...
APT10050B2LC APT10050LLC
1000V 21A 0.500W
B2LC
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high
voltage N-Channel enhancement mode power
MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. Identical Specifications: T-MAX™ or TO-264 Package Lower Gate Charge & Capacitance Easier To Drive 100% Avalanche Tested Faster switching
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter
T-MAX™
TO-264
LLC
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT10050 UNIT Volts Amps
Drain-Source
Voltage
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
Gate-Source
Voltage Continuous Gate-Source
Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L A C I N H C N E T O I D T E A C M N R A O V F D N A I
1000 21 84 ±30 ±40 520 4.16 300 21 50 -55 to 150
(Repetitive and Non-Repetitive)
1 4
Volts Watts W/°C °C Amps mJ
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown
Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amp...