APT1004R2KN

D TO-220 G S APT1004RKN APT1004R2KN 1000V 3.6A 4.00 Ω 1000V 3.5A 4.20 Ω POWER MOS IV ® N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol Parameter V DSS ID IDM V GS PD Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C, Derate Above 25°C 1 All Ratings: T C = 25°C unless otherwise specified. APT1004R2KN 1000 3.5 14.0 ±30 125 -55 to 150 APT1004RKN 1000 3.6 14.4 UNIT Volts Amps Amps Volts Watts °C TJ,TSTG Operating and Storage Junction Temperature Range STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number BVDSS IDSS IGSS ID(ON) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) (VDS = 0.8 VDSS, VGS = 0V, T C = 125°C) Gate-Source Leakage Current (VGS = ±30V, V DS = 0V) On State Drain Current 2 MIN APT1004RKN APT1004R2KN TYP MAX UNIT Volts Volts 1000 1000 250 1000 ±100 µA nA Amps Amps APT1004RKN APT1004R2KN 3.6 3.5 2 4 4.00 4.20 (VDS > ID(ON) x R DS (ON) Max, VGS = 10V) 2 VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) RDS(ON) Static Drain-Source On-State Resistance (VGS = 10V, ID = 0.5 ID [Cont.]) APT1004RKN APT1004R2KN Volts Ohms Ohms THERMAL CHARACTERISTICS Symbol Characteristic RθJC RθJA TL Junction to Case Junction to Ambient Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec. MIN TYP MAX UNIT °C/W °C/W °C 1.00 80 300 CAUTION: These Device...