D
TO-247
G S
APT1004RBN
®
1000V 4.4A 4.00Ω
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Paramet...
D
TO-247
G S
APT1004RBN
®
1000V 4.4A 4.00Ω
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source
Voltage
APT1004R2BN 1000V 4.0A 4.20Ω
All Ratings: TC = 25°C unless otherwise specified.
APT 1004RBN APT 1004R2BN UNIT Volts Amps
N - CHANNEL ENHANCEMENT MODE HIGH
VOLTAGE POWER
MOSFETS
1000 4.4 17.6 ± 30 180 1.44
1000 4.0 16
Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source
Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
1
Volts Watts W/°C °C
-55 to 150 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown
Voltage (VGS = 0V, ID = 250 µA) On State Drain Current
2
MIN APT1004RBN APT1004R2BN APT1004RBN APT1004R2BN APT1004RBN APT1004R2BN
TYP
MAX
UNIT Volts
1000 1000 4.4
Amps
ID(ON)
(VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate
Voltage Drain Current (VDS = VDSS, VGS = 0V)
2
4.0 4.00
Ohms
RDS(ON)
4.20 250 1000 ± 100 2 4
µA nA Volts
IDSS IGSS VGS(TH)
Zero Gate
Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ± 30V, VDS = 0V) Gate Threshold
Voltage (VDS = VGS, ID = 1.0mA)
THERMAL CHARACTERISTICS
Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W
050-0011 Rev C
0.68 40
CAUTION: T...