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APT10030L2VR Datasheet

Part Number APT10030L2VR
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description MOSFET
Datasheet APT10030L2VR DatasheetAPT10030L2VR Datasheet (PDF)

APT10030L2VR 1000V 33A 0.300W POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. TO-264 Max • TO-264 MAX Package • Faster Switching • Lower Leakage MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage • 100% A.

  APT10030L2VR   APT10030L2VR






Part Number APT10030L2VFR
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description MOSFET
Datasheet APT10030L2VR DatasheetAPT10030L2VFR Datasheet (PDF)

APT10030L2VFR 1000V 33A 0.300W POWER MOS V ® FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package • Lower Leakage • Fast Recovery Body Diode MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Sourc.

  APT10030L2VR   APT10030L2VR







MOSFET

APT10030L2VR 1000V 33A 0.300W POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. TO-264 Max • TO-264 MAX Package • Faster Switching • Lower Leakage MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage • 100% Avalanche Tested G D S All Ratings: TC = 25°C unless otherwise specified. APT10030L2VR UNIT Volts Amps Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy L A C I N H C N E T O I E T C MA N A OR V AD INF 1000 33 132 ±30 ±40 830 6.64 300 33 50 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/°C °C Amps mJ 3200 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 1000 33 0.300 25 250 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) .


2005-04-23 : DP100S    T510    74HCT166    74HCT173    74HCT174    74HCT175    74HCT181    74HCT182    74HCT190    74HCT191   


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