APT10026JN

D S G D S G S SO 2 T- 27 APT10026JN 1000V 33A 0.26Ω "UL Recognized" File No. E145592 (S) ISOTOP® POWER MOS IV ® MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor 1 SINGLE DIE ISOTOP® PACKAGE All Ratings: TC = 25°C unless otherwise specified. APT 10026JN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000 33 132 ± 30 690 5.52 -55 to 150 300 and Inductive Current Clamped Volts Watts W/°C °C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 µA) On State Drain Current 2 MIN APT10026JN TYP MAX UNIT Volts 1000 ID(ON) APT10026JN 33 Amps (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ± 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, I D = 5.0mA) 2 RDS(ON) APT10026JN 0.26 Ohms IDSS IGSS VGS(TH) 250 1000 ± 100 2 4 µA nA Volts THERMAL CHARACTERISTICS Symbol RΘJC RΘCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound ...