APM9932/C
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
•
N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS...
APM9932/C
Dual Enhancement Mode
MOSFET (N-and P-Channel)
Features
N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V
Pin Description
APM9932
S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2
S1 G1 S2 G2
APM9932C
1 2 3 4 8 7 6 5 D D D D
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P-Channel -20V/-6A, RDS(ON)=30mΩ(typ.) @ VGS=-4.5V RDS(ON)=45mΩ(typ.) @ VGS=-2.5V Super High Dense Cell Design for Extremely Low RDS(ON)
SO-8
D1 D1
SO-8
D
Reliable and Rugged SO-8 Package
G1 G1 G2
Applications
Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.
G2
S1
S1
S2
N-Channel
MOSFET
S2
N- and P-Channel
MOSFET
D2
D2
P-Channel
MOSFET
Ordering and Marking Information
APM9932/C
Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel
APM9932/C K :
APM9932/C XXXXX
XXXXX - Date Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2002 1 www.anpec.com.tw
APM9932/C
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM
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(TA = 25°C unless otherwise noted)
N-Channel 20 ±16 15 30 P-Channel -20 ±12 -6 -10 2.5 W 1.0 150 -55 to 150 50 1.0 °C °C °C/W A V Unit
Parameter Drain-Source
Voltage Gate-Source
Voltage Maximum Drain Current – Con...