APM9928
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
•
N-Channel 20V/5A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(...
APM9928
Dual Enhancement Mode
MOSFET (N-and P-Channel)
Features
N-Channel 20V/5A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=50mΩ(typ.) @ VGS=3.0V
Pin Description
5 / 5 / ! " & % $ # , , , ,
P-Channel -20V/-3.2A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V RDS(ON)=120mΩ(typ.) @ VGS=-3.0V RDS(ON) Reliable and Rugged SO-8 Package
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www.DataSheet4U.com
SO-8
, 5
Super High Dense Cell Design for Extremely Low
/
Applications
5
,
,
Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.
N-Channel
MOSFET
P-Channel
MOSFET
Ordering and Marking Information
APM9928
Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel
APM9928 K :
APM9928 XXXXX
XXXXX - Date Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.3 - July., 2003 1 www.anpec.com.tw
APM9928
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM
www.DataSheet4U.com PD
(TA = 25°C unless otherwise noted)
N-Channel 20 ±16 5 10 2.5 1.0 150 -55 to 150 50 P-Channel -20 ±16 3.2 -10 2.5 1.0 Unit V A W °C °C °C/W
Parameter Drain-Source
Voltage Gate-Source
Voltage Maximum Drain Current Continuous Maximum Drain Current Pulsed Maximum Power Dissipation Maximum Junction Temperature Storage Temper...
