APM4430

APM4430 N-Channel Enhancement Mode MOSFET Features 30V/23A , RDS(ON)=4.5mΩ(typ.) @ V =10V GS RDS(ON)=7mΩ(typ.) @ V =5V GS Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package Applications Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems . Ordering and Marking Information Pin Description 54 63 72 81 SO − 8 APM 4430 APM4430 K : H a n d lin g C o d e Temp. Range Package Code APM 4430 XXXXX Package Code K : SO -8 O perating Junction Tem p. R ange C : -55 to 150°C H andling C ode TU : Tube TR : Tape & Reel XXX XX - D ate Code Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Maximum Drain Current – Continuous IDM Maximum Drain Current – Pulsed Rating 30 ±20 23 ± 60 Unit V A ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and adv...