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APL501P

Part Number	APL501P
Manufacturer	Advanced Power Technology
Description	N-Channel MOSFET
Published	Apr 23, 2005
Detailed Description	D P-Pack G S APL501P 500V 43.0A 0.12W HERMETIC PACKAGE POWER MOS IV ® MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD...
Datasheet	APL501P PDF File

Overview

D P-Pack G S APL501P 500V 43.
0A 0.
12W HERMETIC PACKAGE POWER MOS IV ® MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
1 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified.
APL501P UNIT Volts Amps 500 43 172 ±30 520 4.
16 -55 to 150 and Inductive Current Clamped Volts Watts W/°C °C 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(...

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