APL501J

G S D SOT-227 S D G S APL501J 500V 43.0A 0.12W ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter VDSS ID IDM, lLM VGS Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 and Inductive Current Clamped Gate-Source Voltage PD Total Power Dissipation @ TC = 25°C Linear Derating Factor TJ,TSTG TL Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. APL501J 500 43 172 ±30 520 4.16 -55 to 150 300 UNIT Volts Amps Volts Watts W/°C °C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 500 ID(ON) On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 8V) 43 RDS(ON) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID [Cont.]) IDSS Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 2 0.12 25 250 ±100 4 Volts Amps Ohms µA nA Volts THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case RθJA Junction to Ambient VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to M...