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APL1001J

Advanced Power Technology
Part Number APL1001J
Manufacturer Advanced Power Technology
Description N-Channel Power MOSFET
Published Apr 23, 2005
Detailed Description G S D SOT-227 S D G S APL1001J 1000V 18.0A 0.60W ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV® SINGL...
Datasheet PDF File APL1001J PDF File

APL1001J
APL1001J

Overview
G S D SOT-227 S D G S APL1001J 1000V 18.
0A 0.
60W ISOTOP® "UL Recognized" File No.
E145592 (S) POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter VDSS ID IDM, lLM VGS Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 and Inductive Current Clamped Gate-Source Voltage PD Total Power Dissipation @ TC = 25°C Linear Derating Factor TJ,TSTG TL Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
APL1001J 1000 18 72 ±30 520 4.
16 -55 to 150 300 UNIT Volts Amps Volts Watts W/°C °C ...


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