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AP9T18GJ Datasheet

Part Number AP9T18GJ
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP9T18GJ DatasheetAP9T18GJ Datasheet (PDF)

www.DataSheet4U.com AP9T18GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Capable of 2.5V gate drive ▼ Surface mount package ▼ RoHS Compliant N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 20V 14mΩ 38A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximu.

  AP9T18GJ   AP9T18GJ






Part Number AP9T18GJ-HF-3
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-channel Enhancement-mode Power MOSFET
Datasheet AP9T18GJ DatasheetAP9T18GJ-HF-3 Datasheet (PDF)

Advanced Power Electronics Corp. AP9T18GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Supports Gate Drive as low as 2.5V Fast Switching Characteristics Low Gate Charge RoHS-compliant, Halogen-free G S D BV DSS R DS(ON) ID 20V 14mΩ 38A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S TO-252 (H) The AP9T18GH-HF-3 is in the TO-252 package which is widely preferred for commercial a.

  AP9T18GJ   AP9T18GJ







Part Number AP9T18GH-HF-3
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-channel Enhancement-mode Power MOSFET
Datasheet AP9T18GJ DatasheetAP9T18GH-HF-3 Datasheet (PDF)

Advanced Power Electronics Corp. AP9T18GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Supports Gate Drive as low as 2.5V Fast Switching Characteristics Low Gate Charge RoHS-compliant, Halogen-free G S D BV DSS R DS(ON) ID 20V 14mΩ 38A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S TO-252 (H) The AP9T18GH-HF-3 is in the TO-252 package which is widely preferred for commercial a.

  AP9T18GJ   AP9T18GJ







Part Number AP9T18GH-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP9T18GJ DatasheetAP9T18GH-HF Datasheet (PDF)

Advanced Power Electronics Corp. AP9T18GH-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Capable of 2.5V Gate Drive ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free D G S Description AP9T18 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applica.

  AP9T18GJ   AP9T18GJ







Part Number AP9T18GH
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP9T18GJ DatasheetAP9T18GH Datasheet (PDF)

www.DataSheet4U.com AP9T18GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Capable of 2.5V gate drive ▼ Surface mount package ▼ RoHS Compliant N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 20V 14mΩ 38A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximu.

  AP9T18GJ   AP9T18GJ







N-CHANNEL ENHANCEMENT MODE POWER MOSFET

www.DataSheet4U.com AP9T18GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Capable of 2.5V gate drive ▼ Surface mount package ▼ RoHS Compliant N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 20V 14mΩ 38A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Pulsed Drain Current 1 Rating 20 ±16 38 24 140 31.3 0.25 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4 110 Units ℃/W ℃/W Data and specifications subject to change without notice 200908052-1/4 www.DataSheet4U.com AP9T18GH/J Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 20 0.5 Typ. 0.1 33 16 3 9 12 80 22 12 280 220 1.54 Max. Units 14 28 1.5 1 25 ±100 25.


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