AP9973H/J
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Single Drive Requirement ▼ Surface www.DataSheet4U.com M...
AP9973H/J
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Single Drive Requirement ▼ Surface www.DataSheet4U.com Mount Package G S D
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET
BVDSS RDS(ON) ID
60V 80mΩ 14A
Description
The Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low
voltage applications such as DC/DC converters. The through-hole version (AP9973J) are available for low-profile applications.
G D S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 60 ±20 14 9 40 27 0.22 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.5 110 Unit ℃/W ℃/W
Data and specifications subject to change without notice
2001023031
AP9973H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown
Voltage
2
Test Conditions VGS=0V, ID=250uA
Min...